View S29AL004D70DGI017_7175535.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

publication number s29al004d_kgd_sp revision a amendment 6 issue date march 9, 2009 this product has been retired and is not recommended for designs . please contact your spansion representative for alternates. availability of this document is retained for reference and historical purposes only. distinctive characteristics ? single power supply operation ? 2.7v to 3. v for read, program, and erase operations ? manufactured on 0.20m process technology ? high performance ? access times as fast as 70 ns ? ultra low power consumption (typical values at 5 mhz) ? 200 na automatic sleep mode current ? 200 na standby mode current ? 9 ma read current ? 20 ma program/erase current ? flexible sector architecture ? one 16 kbyte, two 8 kbyte, one 32 kbyte, and seven 64 kbyte sectors (byte mode) ? one 8 kword, two 4 kword, one 16 kword, and seven 32 kword sectors (word mode) ? supports full chip erase ? sector protection features: ? a hardware method of locking a sector to prevent any program or erase operations within that sector ? sectors can be locked in-system or via programming equipment ? temporary sector unprotect feature allows code changes in previously locked sectors ? unlock bypass program command ? reduces overall programming time when issuing multiple program command sequences ? top or bottom boot block configurations available ? embedded algorithms ? embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors ? embedded program algorithm automatically writes and verifies data at specified addresses ? minimum one million write cycle guarantee per sector ? compatibility with jedec standards ? pinout and software compatible with single-power supply flash ? superior inadvertent write protection ? data# polling and toggle bits ? provides a software method of detecting program or erase operation completion ? ready/busy# pin (ry/by#) ? provides a hardware method of detecting program or erase cycle completion ? erase suspend/erase resume ? suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ? hardware reset pin (reset#) ? hardware method to reset the device to reading array data ? 20-year data retention at 125 c ? reliable operation for the life of the system ? tested to data sheet specifications at temperature ? quality and reliability levels equivalent to standard packaged components s29al004d known good die 4 megabit (512k x 8-bit/256 k x 16-bit) cmos 3.0 volt-only, boot sector flash memory supplement
2 s29al004d known good die s29al004d_kgd_sp_a6 march 9, 2009 supplement 1. general description the s29al004d in known good die (kgd) form is an 4 mbit, 3.0 volt-only flash memory. spansion defines kgd as standard product in die form, tested for f unctionality and speed. spansio n kgd products have the same reliability and quality as spans ion products in packaged form. 1.1 s29al004d features the s29al004d is an 4 mbit, 3.0 volt-only flash memo ry organized as 524,288 bytes or 262,144 words. the word-wide data (x16) appears on dq15?dq0; the byte- wide (x8) data appears on dq7?dq0. to eliminate bus contention, the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 3.0 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. no v pp is required for program or erase operations. the device can also be programmed in standard eprom programmers. the device is entirely command set compatible with the jedec single-power-s upply flash standard . commands are written to the command register usin g standard microprocessor write timings. register contents serve as input to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data n eeded for the programming and erase operations. reading data out of the device is similar to re ading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithm?an internal algorithm that automati cally times the program pulse widths and verifies proper cell margin. the unlock bypass mode facilitates faster programming times by requiring only two write cycles to program dat a instead of four. device erasure occurs by executing the er ase command sequence. this initiates the embedded erase algorithm?an internal algorithm that automatically prepr ograms the array (if it is not already programmed) before executing the erase op eration. during erase, the device au tomatically times the erase pulse widths and verifies proper cell margin. the host system can detect wh ether a program or erase operation is co mplete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6 (toggle) status bits . after a program or erase cycle is completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write operations during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of t he sectors of memory. this can be ac hieved in-system or via programming equipment. the erase suspend feature enables the user to put erase on hold fo r any period of time to read data from, or program data to, any sector that is not selected fo r erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset circuitr y. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the device offers two power-saving features. when addresse s are stable for a specified amount of time, the device enters the automatic sleep mode . the system can also place the device into the standby mode . power consumption is greatly reduced in both these modes. spansion?s flash technology combines years of flas h memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunneling. the data is programmed using hot electron injection. 1.2 electrical specifications refer to the s29al004d data sheet, publication number s2 9al004d_00, for full electr ical specifications on the s29al004d in kgd form.
march 9, 2009 s29al004d_kgd_sp_a6 s29al004d known good die 3 supplement 2. product selector guide 3. die photograph & pad locations family part number s29al004d kgd speed option (v cc = 2.7v ? 3.6v) 70 90 max access time, t acc (ns) 70 90 max ce# access, t ce (ns) 70 90 max oe# access, t oe (ns) 30 35 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 note: wirebond must be 100% within bondpad opening.
4 s29al004d known good die s29al004d_kgd_sp_a6 march 9, 2009 supplement 4. pad description 4.1 pad relative to die center note the coordinates above are relative to the die cent er and can be used to operate wire bonding equipment. xy x y 1 a15 71.110 36.428 1.806 0.925 2 a14 66.008 36.428 1.677 0.925 3 a13 60.905 36.428 1.547 0.925 4 a12 55.803 36.428 1.417 0.925 5 a11 50.700 36.428 1.288 0.925 6 a10 45.598 36.428 1.158 0.925 7 a9 40.496 36.428 1.029 0.925 8 a8 35.393 36.428 0.899 0.925 9 we# 25.189 36.428 0.640 0.925 10 reset# 20.086 36.428 0.510 0.925 11 ry/by# -19.245 36.428 -0.489 0.925 12 a17 -34.553 36.428 -0.878 0.925 13 a7 -39.655 36.428 -1.007 0.925 14 a6 -44.757 36.428 -1.137 0.925 15 a5 -49.860 36.428 -1.266 0.925 16 a4 -54.962 36.428 -1.396 0.925 17 a3 -60.064 36.428 -1.526 0.925 18 a2 -65.167 36.428 -1.655 0.925 19 a1 -70.269 36.428 -1.785 0.925 20 a0 -70.467 -36.407 -1.790 -0.925 21 ce# -65.365 -36.407 -1.660 -0.925 22 vss -60.261 -36.407 -1.531 -0.925 23 oe# -51.071 -36.407 -1.297 -0.925 24 dq0 -44.610 -36.201 -1.133 -0.920 25 dq8 -39.196 -36.201 -0.996 -0.920 26 dq1 -33.792 -36.201 -0.858 -0.920 27 dq9 -28.378 -36.201 -0.721 -0.920 28 dq2 -22.965 -36.201 -0.583 -0.920 29 dq10 -17.551 -36.201 -0.446 -0.920 30 dq3 -12.146 -36.201 -0.309 -0.920 31 dq11 -6.732 -36.201 -0.171 -0.920 32 vcc 0.649 -36.201 0.016 -0.920 33 dq4 11.644 -36.201 0.296 -0.920 34 dq12 17.058 -36.201 0.433 -0.920 35 dq5 22.462 -36.201 0.571 -0.920 36 dq13 27.876 -36.201 0.708 -0.920 37 dq6 33.289 -36.201 0.846 -0.920 38 dq14 38.703 -36.201 0.983 -0.920 39 dq7 44.108 -36.201 1.120 -0.920 40 dq15/a-1 49.522 -36.201 1.258 -0.920 41 vss 59.721 -36.407 1.517 -0.925 42 byte# 64.913 -36.407 1.649 -0.925 43 a16 70.016 -36.407 1.778 -0.925 pad name pad no. pad center (mils) pad center (millimeters)
march 9, 2009 s29al004d_kgd_sp_a6 s29al004d known good die 5 supplement 5. pad description 5.1 pad relative to v cc note the coordinates above are relative to v cc and can be used to operate wire bonding equipment. xyxy 1 a15 70.461 72.629 1.790 1.845 2 a14 65.359 72.629 1.661 1.845 3 a13 60.256 72.629 1.531 1.845 4 a12 55.154 72.629 1.401 1.845 5 a11 50.051 72.629 1.272 1.845 6 a10 44.949 72.629 1.142 1.845 7 a9 39.847 72.629 1.013 1.845 8 a8 34.744 72.629 0.883 1.845 9 we# 24.540 72.629 0.624 1.845 10 reset# 19.437 72.629 0.494 1.845 11 ry/by# -19.894 72.629 -0.505 1.845 12 a17 -35.202 72.629 -0.894 1.845 13 a7 -40.304 72.629 -1.023 1.845 14 a6 -45.406 72.629 -1.153 1.845 15 a5 -50.509 72.629 -1.282 1.845 16 a4 -55.611 72.629 -1.412 1.845 17 a3 -60.713 72.629 -1.542 1.845 18 a2 -65.816 72.629 -1.671 1.845 19 a1 -70.918 72.629 -1.801 1.845 20 a0 -71.116 -0.206 -1.806 -0.005 21 ce# -66.014 -0.206 -1.676 -0.005 22 vss -60.910 -0.206 -1.547 -0.005 23 oe# -51.720 -0.206 -1.313 -0.005 24 dq0 -45.259 0.000 -1.149 0.000 25 dq8 -39.845 0.000 -1.012 0.000 26 dq1 -34.441 0.000 -0.874 0.000 27 dq9 -29.027 0.000 -0.737 0.000 28 dq2 -23.614 0.000 -0.599 0.000 29 dq10 -18.200 0.000 -0.462 0.000 30 dq3 -12.795 0.000 -0.325 0.000 31 dq11 -7.381 0.000 -0.187 0.000 32 vcc 0.000 0.000 0.000 0.000 33 dq4 10.995 0.000 0.280 0.000 34 dq12 16.409 0.000 0.417 0.000 35 dq5 21.813 0.000 0.555 0.000 36 dq13 27.227 0.000 0.692 0.000 37 dq6 32.640 0.000 0.830 0.000 38 dq14 38.054 0.000 0.967 0.000 39 dq7 43.459 0.000 1.104 0.000 40 dq15/a-1 48.873 0.000 1.242 0.000 41 vss 59.072 -0.206 1.501 -0.005 42 byte# 64.264 -0.206 1.633 -0.005 43 a16 69.367 -0.206 1.762 -0.005 pad no. pad name pad center (mil) pad center (millimeters)
6 s29al004d known good die s29al004d_kgd_sp_a6 march 9, 2009 supplement 6. ordering information 6.1 standard products spansion standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the elements below. valid combinations valid combinations list configurations planned to be su pported in volume for this device. consult the local spansion sales office to confirm availability of specif ic valid combinations and to check on newly released combinations. note: 725 m is only available in s29al004d70wev019 s29al004d 70 w h i 01 i device carrier 4 = die in surftape? (tape and reel) 2500 per 7 inch reel 7 = die in waffle pack 140 die per 5 tray stack 9 = wafer in wafer jar model number 01 = v cc = 2.7 - 3.6v, top boot sector device 02 = v cc = 2.7 - 3.6v, bottom boot sector device temperature range i = industrial (-40c to +85c) v = automotive - in cabin (-40c to +105c) die/wafer option e = 725 m thickness without polyimide h = 280 m thickness without polyimide g = 500 m thickness without polyimide package type d = die with kgd test flow w = wafer with kgd test flow speed option 70 = 70 ns access speed 90 = 90 ns access speed device number/description s29al004d valid combinations device number speed option package type, and temperature range model number die revision s29al004d 70, 90 dhi, dgi, dhv, dgv 01, 02 4, 7 wev, whi, wgi, whv, wgv 9
march 9, 2009 s29al004d_kgd_sp_a6 s29al004d known good die 7 supplement 7. packaging information 7.1 surftape packaging 7.2 waffle pack packaging direction of feed orientation relative to leading edge of tape and reel 16 mm orientation relative to top left corner of waffle pack cavity plate
8 s29al004d known good die s29al004d_kgd_sp_a6 march 9, 2009 supplement 8. product test flow figure 8.1 provides an overview of spansion?s known good die test flow. for more detailed information, refer to the s29al004d product qualification database su pplement for kgd. spansion implements quality assurance procedures throughout the product test flow . in addition, an off-line quality monitoring program (qmp) further guarantees spansion quality standard s are met on known good die products. these qa procedures also allow spansion to produce kgd pr oducts without requiring or implementing burn-in. figure 8.1 spansion kgd product test flow wafer sort 1 bake 24 hours at 250 c wafer sort 2 wafer sort 3 high temperature packaging for shipment shipment dc parameters functionality programmability erasability data retention dc parameters functionality programmability erasability dc parameters functionality programmability erasability speed incoming inspection wafer saw die separation 100% visual inspection die pack
march 9, 2009 s29al004d_kgd_sp_a6 s29al004d known good die 9 supplement 9. physical specifications die dimensions ........................................................................................................ 153 mils x 87 mils .................................................................................................................... 3.9 mm x 2. 33 mm die thickness .......................................................................................................... 500 m bond pad size ......................................................................................................... 3.19 mil s x 3.19 mils .................................................................................................................... 81 m x 81 m pad area free of passivation .................................................................................. 10.18 mils 2 .................................................................................................................... 6,561 m 2 pads per die ............................................................................................................ 44 bond pad metalization ............................................................................................. al/cu die backside .......... .............. .............. .............. .............. .............. .............. .............. no met al passivation................................................................................................................ nitr ide/sog/nitride 10. dc operating conditions v cc (supply voltage) ................................................................................................ 2.7 v to 3.6 v operating temperature commercial ................................................................................................ 0c to +70c industrial .............. .............. .............. .............. .............. .............. .............. ... ?40c to +85c automotive in cabin .... .............. .............. .............. .............. ........... ............ ?40c to +105c 11. manufacturing information manufacturing ........... .............. .............. .............. .............. .............. .............. ........... spansio n test ......................................................................................................................... p enang, malaysia manufacturing id (top boot)......... .............. .............. .............. .............. .............. ..... 98f10ak, 98f10ag (bottom boot)................................................................................ 98f10abk, 98f10abg preparation for shipment ...... .............. .............. .............. .............. .............. ............. penang, malay sia fabrication process ................................................................................................. cs49ss die revision ............................................................................................................ 1 12. special handling instructions 12.1 processing do not expose kgd products to ultrav iolet light or process them at temperatures greater than 250c. failure to adhere to these handling instruct ions will result in irreparable damage to the devices. for best yield, spansion recommends assembly in a class 10k clean room with 30% to 60% relative humidity. 12.2 storage store at a maximum temperature of 30c in a nitr ogen-purged cabinet or vacu um-sealed bag. observe all standard esd handling procedures.
10 s29al004d known good die s29al004d_kgd_sp_a6 march 9, 2009 supplement 13. terms and conditions of sale fo r spansion non-volatile memory die all transactions relating to unpackaged die under th is agreement shall be subject to spansion?s standard terms and conditions of sale, or any revisions thereof, which revisions spansion reserves the right to make at any time and from time to time. in the event of conf lict between the provisions of spansion?s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. spansion warrants its manufactured unpackaged die whether shipped to customer in individual dice or wafer form (?known good die,? ?kgd?, ?die,? ?known good wafer?, ?kgw?, or wafe r(s)) will meet spansion's published specifications and against defective materials or workmans hip for a period of one (1) year from date of shipment. this limited warranty does not extend beyond th e first purchaser of said die or wafer(s). buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of kgd or kgw (including but not limited to proper die preparation, die attach, backgrinding, singulation, wire bonding and related assembly and te st activities), and compliance with all guidelines set forth in spansion's specifications for kgd or kgw, and spansion assumes no responsibility for environmental effects on kgd or kgw or for any activity of buyer or a third party that damages the die or wafer(s) due to improper use, abuse, negligence, im proper installation, improper backgrinding, improper singulation, accident, loss, damage in transit, or unaut horized repair or alteration by a person or entity other than spansion (?limited warranty exclusions?) the liability of spansion under this lim ited warranty is limited, at spansion's option, solely to repair the die or wafer(s), to send replacement die or wafer(s), or to make an appropriate credit adjustment or refund in an amount not to exceed the original purchase price actually paid for the die or wafer(s) returned to spansion, provided that: (a) spansion is promptly notified by buyer in writing during the applicable warranty period of any defect or nonconformity in the die or wafer(s); (b ) buyer obtains authorization from spansion to return the defective die or wafer(s); (c) the defective die or wafer(s) is returned to spansion by buyer in accordance with spansion's shipping instructions se t forth below; and (d) buyer shows to spansion's satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the above-referenced warranty exclusions. buyer shall ship such defective die or wafer(s) to spansion via spansion's carrier, collect. risk of loss will transfer to spansion when the defective die or wafer(s) is provided to spansion's carrier. if buyer fails to adhere to these warranty returns guidelines, buyer shall assume all risk of loss and shall pay for all freight to spansion's specified lo cation. the aforementioned provisions do not extend the original limited warranty period of any die or wafer(s) that has either been replaced by spansion. this limited warranty is expressed in lieu of all other warranties, expressed or implied, including the implied warranty of fitness for a particular purpose, the implied warranty of merchantability or noninfri ngement and of all other obligations or liabilities on spansion's part, and it neither assumes nor authorizes any other person to assume for spansion any other liabilities. the foregoing constitutes the buyer's sole and exclusive remedy for the furnishing of defective or non conforming known good die or known good wafer(s) an d spansion shall not in any ev ent be liable for increased manufacturing costs, downtime costs, damages relating to buyer's procurement of substitute die or wafer(s) (i .e., ?cost of cover?), loss of profits, revenues or goodwill, loss of use of ordamage to any associated equipment, or any other indirect, incidental, special or consequential damage s by reason of the fact that such known good die or known good wafer(s) shall have been determined to be defective or non conforming. buyer agrees that it will make no warranty representatio ns to its customers which exceed those given by spansion to buyer unless and until buyer shall agree to indemnify spansion in writing for any claims which exceed spansion's limited warranty. known good die or known good wafer(s) are not designed or authorized for use as components in life support appli ances, devices or systems wher e malfunction of the die or wafer(s) can reasonably be expected to result in a personal injury. buyer's use of known good die or known good wafer(s) for use in life support applications is at buyer's own risk and buyer agrees to fully indemnify spansion for any damages resulting in such use or sale. known good die or known good wafer are not designed or authorized for use as components in life support appliances, devices or systems where malf unction of the die or wafer can re asonably be expected to result in a personal injury. buyer's use of known good die or know n good wafer for use in life support applications is at buyer's own risk and buyer agrees to fully indemnify spansion for any damages resulting in such use or sale.
march 9, 2009 s29al004d_kgd_sp_a6 s29al004d known good die 11 supplement 14. revision history section description revision a0 (june 13, 2005) initial release. revision a1 (september 1, 2005) pad locations replaced pad locations diagram revision a2 (april 14, 2006) pad locations corrected pad locations diagram revision a3 (may 3, 2006) pad locations enlarged numbers in pad locations diagram revision a4 (february 9, 2007) manufacturing information changed test location to penang, malaysia revision a5 (july 17, 2007) ordering information modified temperature range options and die/wafer options valid combinations table modified options and added note packaging information removed references to gel-pak revision a6 (march 9, 2009) global added obsolescence information.
12 s29al004d known good die s29al004d_kgd_sp_a6 march 9, 2009 supplement colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, genera l office use, personal use, and household use, but are not designed, developed and m anufactured as contemplated (1) for any use that includes fatal risks or dangers t hat, unless extremely high safety is secured, could have a s erious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intole rable (i.e., submersible repeater and artifi cial satellite). please note that spansion will not be liable to you and/or any third party for any claims or damages arising in connection with abo ve-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document r epresent goods or technologies s ubject to certain restriction s on export under the foreign exchange and foreign trade law of japan, the us export ad ministration regulations or the applicable laws of any oth er country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subjec t to change without notice. this document ma y contain information on a spansion product under development by spansion. spansion reserves the right to change or discontinue work on any product without notice. the informati on in this document is provided as is without warran ty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. spansion assume s no liability for any damages of any kind arising out of the use of the information in this document. copyright ? 2005-2009 spansion inc. all rights reserved. spansion ? , the spansion logo, mirrorbit ? , mirrorbit ? eclipse ? , ornand ? , ornand2 ? , hd-sim ? , ecoram ? and combinations thereof, are tradem arks of spansion llc in the us and other countries. other names used are for informational purposes only and ma y be trademarks of their respective owners.

▲Up To Search▲

Price & Availability of S29AL004D70DGI017

	To Download S29AL004D70DGI017 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .